• DocumentCode
    3554840
  • Title

    A very small Schottky barrier diode (SBD) with self-aligned guard ring for VLSI applications

  • Author

    Kim, Sang U.

  • Author_Institution
    IBM General Technology Division, Essex Junction, Vermont
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    49
  • Lastpage
    53
  • Abstract
    A new method for producing a self-aligned SBD guard ring, which uses a minimum of the device area, has been developed. The guard ring was achieved by a boron diffusion around a diffusion barrier such as molybdenum, through an undercut region at the diode periphery formed by the differential etching of a dual insulator (silicon nitride over thermal oxide).
  • Keywords
    Aluminum; Bipolar integrated circuits; Boron; Dielectrics; Etching; Large scale integration; Schottky barriers; Schottky diodes; Silicon compounds; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189537
  • Filename
    1480402
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554840