• DocumentCode
    3554863
  • Title

    Lattice-matched Pb1-xSnxTe/PbTe1-ySeyDH laser diodes operating to 166K

  • Author

    Kasemset, D. ; Fonstad, C.G.

  • Author_Institution
    Massachusetts Institute of Technology, Cambridge, Massachusetts
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    130
  • Lastpage
    132
  • Abstract
    The first successful use of PbTeSe confinement layers in lattice-matched PbSnTe diode layers to produce low threshold, high operating temperature devices is reported. Devices with thresholds of 500 A/cm2and emitting over 400 µW at 100K, and operating pulsed to 166K have been made from liquid phase epitaxy heterostructures in which the degree of lattice mismatch was below 0.04%. Results on both broad area and etched mesa stripe devices are reported.
  • Keywords
    Carrier confinement; DH-HEMTs; Diodes; Epitaxial growth; Etching; Lattices; Materials science and technology; Substrates; X-ray diffraction; X-ray lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189558
  • Filename
    1480423
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554863