Title :
Lattice-matched Pb1-xSnxTe/PbTe1-ySeyDH laser diodes operating to 166K
Author :
Kasemset, D. ; Fonstad, C.G.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, Massachusetts
Abstract :
The first successful use of PbTeSe confinement layers in lattice-matched PbSnTe diode layers to produce low threshold, high operating temperature devices is reported. Devices with thresholds of 500 A/cm2and emitting over 400 µW at 100K, and operating pulsed to 166K have been made from liquid phase epitaxy heterostructures in which the degree of lattice mismatch was below 0.04%. Results on both broad area and etched mesa stripe devices are reported.
Keywords :
Carrier confinement; DH-HEMTs; Diodes; Epitaxial growth; Etching; Lattices; Materials science and technology; Substrates; X-ray diffraction; X-ray lasers;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189558
