• DocumentCode
    3554889
  • Title

    Device and circuit fabrication and physical characterization of pulsed-laser-annealed polysilicon on SiO2and Si3N4

  • Author

    Lam, Hon-Wai ; Shah, Rajiv R. ; Tasch, Al, Jr. ; Crosthwait, Llyod

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Texas
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    213
  • Lastpage
    215
  • Abstract
    MOSFETs were fabricated in frequency-doubled Nd:YAG laser annealed silicon on oxide and nitride, with or without a square grid pattern etched in the insulators. Electron mobility in the range of 200 to 300 cm2/volt-sec had been measured, with highest carrier mobility measured in devices fabricated on oxide with the etched grid pattern.
  • Keywords
    Annealing; Electron mobility; Etching; Frequency; Insulation; Laser theory; MOSFETs; Optical device fabrication; Pulse circuits; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189582
  • Filename
    1480447
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554889