BEST (Base Emitter Self-aligned Technology) a new fabrication method for bipolar LSI

Base Emitter Self-aligned Technology (BEST) as developed as a practical method to increase the packing density of bipolar LSIs and to realize high speed when operated at low power. The BEST technology applies a selective oxidation technique on poly silicon. It produces a smaller device and reduces the circuit parasitic capacitance. An experimental low power CML 29-stage ring oscillator was made using BEST. Propagation delay time of 0.65 nanoseconds per gate was obtained at a power dissipation per gate of 0.6 milliwatts.