Hyper-thin channel M.B.E. GaAs power F.E.T.s by single atomic plane doping

Author

Wood, Colin E.C. ; Judaprawira, Seno ; Eastman, Lester F.

Author_Institution

Cornell University, Ithaca, NY, USA

Volume

fYear

1979

fDate

1979

Firstpage

388

Lastpage

389

Keywords

Atomic layer deposition; Capacitance; Contact resistance; Doping; Electrons; FETs; Gallium arsenide; Linearity; Rough surfaces; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1979 Internationa

Type

DOI

10.1109/IEDM.1979.189633

Filename

1480498

Link To Document