• DocumentCode
    3554970
  • Title

    MoSi2-gate MOSFET´s for VLSI

  • Author

    Chow, T.P. ; Steckl, A.J. ; Motamedi, M.E. ; Brown, D.M.

  • Author_Institution
    General Electric Company, Schenectady, N.Y.
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    458
  • Lastpage
    461
  • Abstract
    Refractory metal silicide gate n-channel MOSFET´s have been fabricated by RF sputtering from a hot-pressed MoSi2alloy target. The annealed MoSi2sheet resistance was 2Ω/□. The MOSFET´s were fabricated using plasma etching, projection alignment and a fully ion-implanted process. Typical values for a 1.7 × 1.7 µm2linear MOSFET are a threshold voltage of 1- 1.5V and a transconductance of 50-100 µmho. Short channel (length and width) and substrate effects on the threshold voltage are demonstrated.
  • Keywords
    Annealing; Dielectrics; Fabrication; Hydrogen; MOSFET circuits; Radio frequency; Silicides; Sputtering; Systems engineering and theory; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189655
  • Filename
    1480520
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554970