• DocumentCode
    3554971
  • Title

    WSi2gate MOS devices

  • Author

    Saraswat, Krishna C. ; Mohammadi, F. ; Meindl, J.D. ; Meindl, J.D.

  • Author_Institution
    Stanford University, Stanford, California
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    462
  • Lastpage
    464
  • Abstract
    Tungsten silicide gate MOS capacitors have been fabricated on n-type
  • Keywords
    Annealing; Capacitance-voltage characteristics; Chemicals; Conductivity; Fabrication; Oxidation; Silicon; Sputtering; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189656
  • Filename
    1480521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3554971