DocumentCode
3554982
Title
Fully ion implanted planar GaAs E-JFET process
Author
Troeger, G.L. ; Behle, A.F. ; Friebertshauser, P.E. ; Hu, K.L. ; Watanabe, S.H.
Author_Institution
McDonnell Douglas Astronautics Company, Huntington Beach, California
Volume
25
fYear
1979
fDate
1979
Firstpage
497
Lastpage
500
Abstract
This paper describes the technology for fabrication of GaAs junction field effect transistor integrated circuits. 1 µm gate geometries are produced with Mg+ion implantation which was not possible with Zn diffusion due to lateral spreading. Threshold voltage is adjustable by varying the Mg+implant energy, and shows improved reproducibility. Ring oscillator circuits fabricated with implanted gates demonstrate the high speed and low power capability of this technology.
Keywords
FET integrated circuits; Fabrication; Gallium arsenide; Geometry; Implants; Integrated circuit technology; Ion implantation; Reproducibility of results; Threshold voltage; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1979 Internationa
Type
conf
DOI
10.1109/IEDM.1979.189666
Filename
1480531
Link To Document