A new silicon heterojunction transistor using the doped SIPOS

A new silicon npn heterojunction transistor with the emitter Gummel number of 2 × 10¹⁵s/cm⁴has been realized using the P-doped SIPOS. The P-doped SIPOS used as an emitter has a wide energy band gap of 1.5 eV and the recombination velocity at SIPOS-Si interface is a very low value of the order of 10²cm/s. Therefore, the current gain of the SIPOS-Si heterojunction transistor can be about 50 times as large as that of conventional silicon homojunction transistors with the same base Gummel number. A pnp heterojunction transistor has been also developed using the B-doped SIPOS and its current gain is about 5 times as large as that of conventional silicon pnp transistors.