• DocumentCode
    3555018
  • Title

    GaAlAs/GaAs heterojunction Schottky barrier gate CCD

  • Author

    Liu, Y.Z. ; Deyhimy, I. ; Anderson, R.J. ; Harris, J.S. ; Tomasetta, L.R.

  • Author_Institution
    Rockwell International Electronics Research Center, Thousand Oaks, California
  • Volume
    25
  • fYear
    1979
  • fDate
    1979
  • Firstpage
    622
  • Lastpage
    624
  • Abstract
    A buried channel Schottky barrier gate GaAlAs/GaAs CCD is described. Device structures, fabrication techniques and results are discussed. Charge transfer efficiency of 0.9993 per transfer has been measured on these 30 gate (10 pixel) CCDs. Dark current was found to be about an order of magnitude lower in GaAlAs than in GaAs. The best Ga.78Al.22As device has between 2 to 4nA/cm2at room temperature.
  • Keywords
    Charge coupled devices; Charge measurement; Charge transfer; Current measurement; Dark current; Fabrication; Gallium arsenide; Heterojunctions; Schottky barriers; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1979 Internationa
  • Type

    conf

  • DOI
    10.1109/IEDM.1979.189701
  • Filename
    1480566
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555018