Title :
A SOS MESFET microwave amplifier
Author :
Cady, W. ; Yu, S.P.
Author_Institution :
General Electric Corp. Research & Development Center, Schenectady, New York
Keywords :
Doping; Dynamic range; Fabrication; Gain; Low-noise amplifiers; MESFETs; Microwave FETs; Microwave amplifiers; Parasitic capacitance; Silicon;
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
DOI :
10.1109/IEDM.1979.189719
