DocumentCode :
3555036
Title :
A SOS MESFET microwave amplifier
Author :
Cady, W. ; Yu, S.P.
Author_Institution :
General Electric Corp. Research & Development Center, Schenectady, New York
Volume :
25
fYear :
1979
fDate :
1979
Firstpage :
678
Lastpage :
678
Keywords :
Doping; Dynamic range; Fabrication; Gain; Low-noise amplifiers; MESFETs; Microwave FETs; Microwave amplifiers; Parasitic capacitance; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
Type :
conf
DOI :
10.1109/IEDM.1979.189719
Filename :
1480584
Link To Document :
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