DocumentCode :
3555050
Title :
Storage characteristics of the Hi-C dynamic RAM cell
Author :
Yaney, D.S. ; Clemens, J.T.
Author_Institution :
Bell Laboratories, Allentown, Pennsylvania
Volume :
25
fYear :
1979
fDate :
1979
Firstpage :
696
Lastpage :
696
Keywords :
Atomic layer deposition; Capacitors; DRAM chips; Electric breakdown; Implants; Leakage current; Photonic band gap; Silicon; Temperature distribution; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1979 Internationa
Type :
conf
DOI :
10.1109/IEDM.1979.189733
Filename :
1480598
Link To Document :
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