Title :
FM-CW radar on a single GaAs/AlGaAs HBT MMIC chip
Author :
Maoz, B. ; Reynolds, L.R. ; Oki, A.
Author_Institution :
Hittite Microwave Corp., Woburn, MA, USA
Abstract :
A novel low-power FM-CW radar on a single chip has been implemented using GaAs/AlGaAs HBT (heterojunction bipolar transistor) technology. An innovative electronic circulator allows operation with a single antenna at C-band. In addition, the chip contains a voltage-controlled oscillator, transmitter amplifier, and receiver mixer with proper filtering. The chip measures 1*2*0.25 mm and operates from a single +5 V supply. In order to minimize cost, a process featuring a relaxed 3 mu m emitter size was used, achieving an f/sub t/ of 24 GHz. Via holes were not used. Potential applications for the chip include range and velocity discriminating fuzes, sensors, and altimeter functions.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; frequency modulation; gallium arsenide; heterojunction bipolar transistors; radar equipment; 24 GHz; 3 micron; 5 V; C-band; FM-CW radar; GaAs-AlGaAs; HBT MMIC chip; SHF; VCO; altimeter functions; electronic circulator; filtering; heterojunction bipolar transistor; monolithic microwave IC; receiver mixer; sensors; single antenna; single chip implementation; transmitter amplifier; velocity discriminating fuzes; voltage-controlled oscillator; Antenna measurements; Costs; Filtering; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Radar antennas; Semiconductor device measurement; Transmitters; Voltage-controlled oscillators;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-0087-4
DOI :
10.1109/MCS.1991.148074
