Title :
X-band MMIC amplifier with pulse-doped GaAs MESFETs
Author :
Shiga, Nobuo ; Nakajima, Shigeru ; Otobe, Kenji ; Sekiguchi, Takeshi ; Kuwata, Nobuhiro ; Matsuzaki, Ken-Ichiro ; Hayashi, Hideki
Author_Institution :
Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Abstract :
An X-band monolithic low-noise amplifier (LNA) with 0.5- mu m-gate pulse-doped GaAs MESFETs was successfully demonstrated for a direct broadcast satellite (DBS) converter. This LNA shows excellent VSWR (voltage standing wave ratio) matches of under 1.4 as well as a noise figure of 1.67 dB and a gain of 24 dB at 12 GHz. The yield of chips within microwave specifications is 62.5%.<>
Keywords :
MMIC; Schottky gate field effect transistors; direct broadcasting by satellite; field effect integrated circuits; gallium arsenide; microwave amplifiers; 0.5 micron; 1.67 dB; 12 GHz; 24 dB; DBS convertor; GaAs; MMIC amplifier; SHF; X-band; direct broadcast satellite; low-noise amplifier; pulse-doped GaAs MESFETs; Gallium arsenide; HEMTs; Low-noise amplifiers; MESFETs; MMICs; Monolithic integrated circuits; Noise figure; Pulse amplifiers; Research and development; Satellite broadcasting;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1991. Digest of Papers, IEEE 1991
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-0087-4
DOI :
10.1109/MCS.1991.148090
