• DocumentCode
    3555141
  • Title

    Planar plasma etching of Mo and MoSi2using NF3

  • Author

    Chow, T.P. ; Steckl, A.J.

  • Author_Institution
    General Electric Corporate Research and Development, Schenectady, NY
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    149
  • Lastpage
    151
  • Abstract
    Planar plasma etching of Mo and MoSi2using NF3gas mixtures is reported for the first time. The etch rates of Mo, MoSi2, and SiO2were determined as a function of RF current and gas pressure. The etch rate selectivities of Mo:SiO2and MoSi2:SiO2was found to be relatively constant at respectively 2-3:1 and 4-6:1 over a broad range of parameters. Diluting the NF3to 10% in Argon lowered the etch rate by a factor of 5-6. Improved line edge profile obtained with NF3etching is shown.
  • Keywords
    Conducting materials; Inorganic materials; Noise measurement; Plasma applications; Plasma materials processing; Plasma properties; Radio frequency; Semiconductor films; Silicon; Sputter etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189776
  • Filename
    1481219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555141