DocumentCode :
3555185
Title :
A model for turn-off in bipolar transistors
Author :
Hower, P.L.
Author_Institution :
Westinghouse R&D Center, Pittsburgh, PA
Volume :
26
fYear :
1980
fDate :
1980
Firstpage :
289
Lastpage :
292
Abstract :
A new model is proposed that accounts for the dynamics of charge removal for a device which is initially in deep or "classical" saturation. An experimental check of the model shows good agreement with measured values of storage time and VBE(t) and vCE(t) waveforms during the turn-off interval. An additional feature of the model is the possibility of introducing the action of circuit elements in an interactive manner so that device behavior in an actual switching circuit can be predicted. Finally, the possibility of predicting the onset of second breakdown is discussed.
Keywords :
Bipolar transistors; Electric breakdown; Inductance; Predictive models; Region 2; Research and development; Switching circuits; Switching loss; Time measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1980 International
Type :
conf
DOI :
10.1109/IEDM.1980.189816
Filename :
1481259
Link To Document :
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