• DocumentCode
    3555255
  • Title

    Thermal diffusion current mechanisms in n+-p-p+Hg1-xCdxTe photodiodes

  • Author

    Shanley, J.F. ; Flanagan, C.T. ; Reine, M.B. ; Casselman, T.N.

  • Author_Institution
    Honeywell Electro-Optic Center, Lexington, MA
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    501
  • Lastpage
    507
  • Abstract
    The thermal diffusion current mechanisms present in an 8-14 micrometer n+-p-p+(Hg,Cd)Te photodiode are analyzed. The n+region diffusion current is determined by first calculating the Auger 1 lifetime in degenerate n-type (Hg,Cd)Te. The Auger 1 lifetime is found to vary as 1/nαo, where 0.7 ≤ α ≤ 1.0 and no is the equilibrium carrier density, for degenerate n-type (Hg,Cd)Te. The p-side diffusion current is calculated by considering the radiative and Auger 7 recombination mechanisms. A comparison of the n+- and p- side thermal diffusion current components reveals that the p-side contribution is dominant.
  • Keywords
    Charge carrier density; Charge carrier lifetime; Charge carrier processes; Energy states; Infrared detectors; Materials science and technology; Photodiodes; Radiative recombination; Spontaneous emission; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189878
  • Filename
    1481321
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555255