DocumentCode
3555274
Title
The influence of temperature on the tolerances of MOS-transistors in a 1 µm technology
Author
Takacs, D. ; Schwabe, U. ; Burker, U.
Author_Institution
Siemens Research Laboratories, Munich, Germany
fYear
1980
fDate
8-10 Dec. 1980
Firstpage
569
Lastpage
573
Abstract
In a 1 µm Si-gate technology, channel length and temperature have a strong impact on the electrical device parameters. Experimental data on the influence of the channel length and the temperature on threshold voltage, breakdown voltage and subthreshold currents are presented for different channel dopings and S/D junction depths. The results are discussed with regard to the electrical device tolerances and to limitations in standard Si-gate technologies.
Keywords
Doping profiles; Electrodes; Least squares approximation; Length measurement; Shape; Temperature dependence; Temperature distribution; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/IEDM.1980.189896
Filename
1481339
Link To Document