Transverse magnetoresistance in GaAs two terminal submicron devices: A characterization of electron transport in the near ballistic regime

Ballistic electron motion at high velocity in thin layers of GaAs has important implications for high speed, high frequency devices. This mode of electron transport is characterized by mean free path lengths of up to 0.2 microns, over which the electrons are accelerated to velocities near 5 × 10⁷cm/sec. We report the results of experimental and theoretical study of ballistic and near ballistic electron transport in the [100] direction in submicron GaAs layers grown by MBE. Results obtained from I-V measurements and magnetoresistance studies are interpreted in conjunction with the predictions of theoretical models to show that high values of drift velocity and large mean free path lengths are reached in short GaAs structures.