Title :
Electron spin grating in multiple quantum well semiconductors
Author :
Cameron, A.R. ; Riblet, P. ; Miller, Alice
Author_Institution :
J.F. Allen Res. Labs., St. Andrews Univ., UK
Abstract :
Summary form only given. We report a new type of optically induced, transient diffraction grating in a multiple quantum well (MQW) semiconductor. The grating is formed by the spatial modulation of the electron spin orientation within a uniform excess carrier distribution and allows the measurement of the in-well electron mobility. We present four-wave mixing results for spin-gratings in a GaAs/AlGaAs MQW semiconductor using picosecond laser pulses and compare the diffusion coefficients determined from spin and amplitude gratings.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; electron mobility; electron spin polarisation; gallium arsenide; multiwave mixing; semiconductor quantum wells; GaAs-AlGaAs; carrier distribution; diffusion coefficient; electron mobility; electron spin grating; four-wave mixing; multiple quantum well semiconductor; optical transient diffraction grating; picosecond laser pulses; Diffraction gratings; Electron mobility; Electron optics; Four-wave mixing; Gallium arsenide; Nonlinear optics; Optical diffraction; Optical mixing; Optical modulation; Quantum well devices;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
1-55752-444-0
