• DocumentCode
    3555320
  • Title

    Multi-color thin film emitters

  • Author

    Hale, L.G. ; Garcia, B. ; Ketchpel, R.D. ; Lim, T.C.

  • Author_Institution
    Rockwell International Corporation, Thousand Oaks, California
  • Volume
    26
  • fYear
    1980
  • fDate
    1980
  • Firstpage
    719
  • Lastpage
    722
  • Abstract
    There is an increasing demand for multi-color flat panel matrix displays. Recent work (1) has shown that thin film electroluminescent devices fabricated from ZnS doped with manganese, sandwiched between two dielectric layers, are capable of high brightness and long life. These devices exhibit many of the characteristics required for flat matrix panels. Using the same structure as above, a green emitting film has been developed which used TbF3as the activator. The brightness of this film is 700 fl which is three times brighter and requires significantly lower drive voltage than previously reported (2). Data will be presented indicating the results of annealing at different temperatures in order to optimize the light output. Electro-optic data indicates that the tunnel field emission model previously reported for Mn activated ZnS films is valid for the TbF3activated ZnS films. Spectroscopic data will be given on other rare earth activated films.
  • Keywords
    Brightness; Dielectric devices; Dielectric thin films; Electroluminescent devices; Flat panel displays; Manganese; Thin film devices; Transistors; Voltage; Zinc compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1980 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1980.189937
  • Filename
    1481380