DocumentCode
3555320
Title
Multi-color thin film emitters
Author
Hale, L.G. ; Garcia, B. ; Ketchpel, R.D. ; Lim, T.C.
Author_Institution
Rockwell International Corporation, Thousand Oaks, California
Volume
26
fYear
1980
fDate
1980
Firstpage
719
Lastpage
722
Abstract
There is an increasing demand for multi-color flat panel matrix displays. Recent work (1) has shown that thin film electroluminescent devices fabricated from ZnS doped with manganese, sandwiched between two dielectric layers, are capable of high brightness and long life. These devices exhibit many of the characteristics required for flat matrix panels. Using the same structure as above, a green emitting film has been developed which used TbF3 as the activator. The brightness of this film is 700 fl which is three times brighter and requires significantly lower drive voltage than previously reported (2). Data will be presented indicating the results of annealing at different temperatures in order to optimize the light output. Electro-optic data indicates that the tunnel field emission model previously reported for Mn activated ZnS films is valid for the TbF3 activated ZnS films. Spectroscopic data will be given on other rare earth activated films.
Keywords
Brightness; Dielectric devices; Dielectric thin films; Electroluminescent devices; Flat panel displays; Manganese; Thin film devices; Transistors; Voltage; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1980 International
Type
conf
DOI
10.1109/IEDM.1980.189937
Filename
1481380
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