Title :
350 ° C CMOS logic process
Author :
Beasom, J.D. ; Moore, R.D. ; Mohammed, G. ; Draper, B.L.
Author_Institution :
Harris Semiconductor, Melbourne, Florida
Abstract :
A dielectrically isolated self-aligned silicon gate CMOS process designed for high temperature operation is described. Component characteristics over the 25°C to 325°C range are presented. Circuit operation to 380°C is demonstrated. Circuit and process modifications which could extend operating temperature to about 450°C are suggested.
Keywords :
CMOS logic circuits; CMOS process; Current supplies; Diodes; Extrapolation; Leakage current; MOS devices; Protection; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1981 International
Conference_Location :
Washington, DC, USA
DOI :
10.1109/IEDM.1981.190085
