• DocumentCode
    3555544
  • Title

    High-field generation of electron traps and charge trapping in ultra-thin SiO2

  • Author

    Jeng, C.S. ; Ranganath, T.R. ; Huang, Cheng H. ; Jones, Stanley H. ; Chang, Thomas T L

  • Author_Institution
    Intel Corporation, Santa Clara, CA
  • Volume
    27
  • fYear
    1981
  • fDate
    1981
  • Firstpage
    388
  • Lastpage
    391
  • Abstract
    It will be shown in this paper that as a consequence of high-field stress on thin SiO2films (70-200Å), two types of charges are introduced into the oxide. Their spatial distribution and formation mechanisms are first investigated. Then the phenomenon of electron trap generation owing to high-field stress is discussed. Experimental techniques and special precautions for seperating the effects of the two types of charges will also be described. The effect of these charges on a floating gate E2PROM cell has been described elsewhere(1)and will not be repeated.
  • Keywords
    Anodes; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Conductivity; Current density; Electron traps; Read only memory; Thermal stresses; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1981 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1981.190095
  • Filename
    1482048
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555544