Title :
Radiation-hard 16K CMOS/SOS clocked static RAM
Author :
Gupta, A. ; Li, M.F. ; Yu, K.K. ; Su, S.C. ; Pandya, P. ; Yang, H.B.
Author_Institution :
Hughes Aircraft Company, Newport Beach, California
Abstract :
A low-temperature, radiation-hard, 2.21µM channel length, CMOS/SOS process has been developed for a 5V power-supply, 16K clocked static RAM, with a standard six-transistor cell configuration. The well-known edge leakage problem in mesa-isolated N-channel SOS transistors has been eliminated. At VDDof 5V, the 16K RAM has typical access times of 150 nsecs and 110 nsecs with phosphorus doped polysilicon and tantalum silicide gates, respectively; the static power dissipation is 35µW and the operating power is 20 mW at 3 MHz.
Keywords :
CMOS process; CMOS technology; Clocks; Conductivity; Electric breakdown; Random access memory; Read-write memory; Silicides; Silicon; Space technology;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190160
