Title :
In0.53Ga0.47As/Si3N4n-channel and p-channel inversion mode MISFET´s
Author :
Liao, A.S.H. ; Leheny, R.F. ; Nahory, R.E. ; DeWinter, J.C. ; Martin, R.J.
Author_Institution :
Bell Laboratories, Holmdel, New Jersey
Abstract :
We describe the operation of both n-channel and p-channel Si3N4insulated gate In0.53Ga0.47As inversion mode MISFET´s. These devices exhibit a maximum transconductance of 4mS/mm which represents a significant improvement over previously reported In0.53Ga0.47As MISFET results.
Keywords :
Contact resistance; Electron mobility; FETs; Indium phosphide; Insulation; MISFETs; Plasma temperature; Semiconductor films; Semiconductor materials; Silicon;
Conference_Titel :
Electron Devices Meeting, 1981 International
DOI :
10.1109/IEDM.1981.190166
