Fabrication and /spl mu/-PL imaging of ridge-type InGaAs quantum wires grown on a (110) cleaved plane of AlGaAs/GaAs superlattice

Author

Arakawa, Takeshi ; Watabe, Hiroshi ; Hayashi, H. ; Arakawa, Yasuhiko

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

1996

fDate

7-7 June 1996

Firstpage

165

Lastpage

166

Abstract

Summary form only given. We successfully fabricated the InGaAs QWRs (lateral width is about 25 nm) on a (110) cleaved plane of AlGaAs-GaAs superlattice by using MOCVD selective growth. Spatially resolved photoluminescence (PL) of the QWRs were observed for the first time by using a /spl mu/PL measurement, showing PL from the quantum wires and its polarisation dependence.

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; light polarisation; optical fabrication; photoluminescence; semiconductor quantum wires; semiconductor superlattices; /spl mu/-PL imaging; 25 nm; AlGaAs-GaAs; AlGaAs/GaAs superlattice; InGaAs; InGaAs quantum wires; MOCVD selective growth; cleaved plane; polarisation dependence; ridge-type; spatially resolved photoluminescence; Fabrication; Gallium arsenide; Indium gallium arsenide; MOCVD; Photoluminescence; Polarization; Spatial resolution; Superlattices; Time measurement; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865718