• DocumentCode
    3555745
  • Title

    A solid state current sense for high current epi base power transistors

  • Author

    Wrathall, Robert S. ; Robb, Stephen P.

  • Author_Institution
    Motorola, Inc., Phoenix, Arizona
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    92
  • Lastpage
    95
  • Abstract
    This paper concerns the development of a current sense device used in high current epi base power transistors. The device exhibits an output current proportional to the square root of input current. A theoretical derivation agrees very well with experimental results. A circuit is described which implements this device. The current sense device was used to investigate high current effects in the bipolar transistor.
  • Keywords
    Bipolar transistors; Current density; Fingers; Laboratories; Power transistors; Research and development; Resistors; Solid state circuits; Surface resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190221
  • Filename
    1482755