DocumentCode
3555745
Title
A solid state current sense for high current epi base power transistors
Author
Wrathall, Robert S. ; Robb, Stephen P.
Author_Institution
Motorola, Inc., Phoenix, Arizona
Volume
28
fYear
1982
fDate
1982
Firstpage
92
Lastpage
95
Abstract
This paper concerns the development of a current sense device used in high current epi base power transistors. The device exhibits an output current proportional to the square root of input current. A theoretical derivation agrees very well with experimental results. A circuit is described which implements this device. The current sense device was used to investigate high current effects in the bipolar transistor.
Keywords
Bipolar transistors; Current density; Fingers; Laboratories; Power transistors; Research and development; Resistors; Solid state circuits; Surface resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190221
Filename
1482755
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