• DocumentCode
    3555751
  • Title

    A folding principle for generating three-dimensional MOSFET device structures in beam-recrystallized polysilicon films

  • Author

    Gibbons, J.F. ; Lee, K.F.

  • Author_Institution
    Stanford Electronics Laboratories, Stanford, CA
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    111
  • Lastpage
    114
  • Abstract
    Some new device structures are proposed in which a set of folding and rotation operations is used to transform planar MOSFET device configurations into three-dimensional structures in beam-recrystallized polysilicon films. Some of the resulting devices use both sides of a recrystallized film for MOSFET device fabrication, while others use a single gate to modulate the surfaces of two separate films simultaneously.
  • Keywords
    CMOS logic circuits; Collaboration; Insulation; Laboratories; MOSFET circuits; Optical device fabrication; Planar arrays; Propagation delay; Ring lasers; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190226
  • Filename
    1482760
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555751