• DocumentCode
    3555753
  • Title

    A novel BBD structure for low voltage operation

  • Author

    Itoh, M. ; Shikata, M. ; Gobara, T. ; Kimura, T. ; Oishi, H. ; Arita, S.

  • Author_Institution
    Matsushita Electronics Corporation, Kyoto, Japan
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    119
  • Lastpage
    122
  • Abstract
    A new MOS BBD which can operate at extremely low voltage has been realized. A novel pentode MOS structure, having three overlapping gates, has been developed by introducing double poly-Silicon process. Making potential gradient along the channel length and excluding the stray capacitance, high transconductance and low channel length modulation are simultaneously obtained, and as a result, the transfer inefficiency is decreased. Consequently, the transfer inefficiency of 2\\times10^{-5} has been obtained even at 1.5V supply and 40kHz clock.
  • Keywords
    Capacitance; Charge transfer; Clocks; Equations; Feedback; Frequency; Impedance; Low voltage; MOSFETs; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190228
  • Filename
    1482762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555753