Molecular beam epitaxy regrowth of top reflectors for multiple wavelength vertical-cavity laser arrays

Summary form only given. We have fabricated novel multiple wavelength vertical-cavity surface-emitting laser (VCSEL) arrays employing molecular beam epitaxy (MBE) regrowth of the top distributed Bragg reflector (DBR). The individual emission wavelength of each laser element in the 2D array is set by anodic oxidation and selective etching of the wafer before regrowth. We obtained record performance devices compared with previously reported multiple wavelength laser arrays. The lasers described here feature submilliamp threshold currents and relatively high single-mode output power. We achieved a 17-nm-wavelength span in a 4/spl times/2 VCSEL array with an arbitrary wavelength distribution.