DocumentCode
3555792
Title
High-frequency, high-power MOS-FET
Author
Ikeda, Hiroaki ; Yoshida, Hiiroshi ; Onikura, Tetsuo
Author_Institution
Japan Broadcasting Corporation
Volume
28
fYear
1982
fDate
1982
Firstpage
246
Lastpage
249
Abstract
A high-frequency, high power n-channel MOS-FET suitable for use in aural power amplifiers of the VHF television transmitters was designed and fabricated. The maximum drain-source voltage as high as 130 volts was obtained with an ON resistance of 0.3 ohm at a gate-source voltage of 20 V with a drain current of 3 A. The drain-source feedback capacitance was designed to be 0.8 pF to operate the MOS-FET at VHF frequencies. The MOS-FET was satisfactorily operated at 250 MHz and the power gain was of 7 dB.
Keywords
Boron; Capacitance; Fabrication; Frequency; High power amplifiers; Low voltage; Power amplifiers; TV; Threshold voltage; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1982 International
Type
conf
DOI
10.1109/IEDM.1982.190264
Filename
1482798
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