• DocumentCode
    3555850
  • Title

    Characteristics of MOS devices in electron beam-recrystallized silicon on insulator

  • Author

    Ohmura, Y. ; Shibata, K. ; Inoue, T. ; Yoshii, T. ; Horiike, Y. ; Horiike, Y.

  • Author_Institution
    Toshiba R & D Center, Kawasaki, Japan
  • Volume
    28
  • fYear
    1982
  • fDate
    1982
  • Firstpage
    429
  • Lastpage
    432
  • Abstract
    N-channel MOS devices have been fabricated in an electron beam-recrystallized silicon film on a Si3N4/SiO2/
  • Keywords
    Annealing; Electron beams; MOS devices; MOSFETs; Optical films; Ring oscillators; Rough surfaces; Semiconductor films; Silicon on insulator technology; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1982 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1982.190316
  • Filename
    1482850
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555850