Self organized InAs-GaAs quantum dots injection laser structure

Author

Kop´ev, P.S. ; Ledentsov, Nikolay N. ; Ustinov, V.M. ; Kochnev, I.V. ; Bert, N.A. ; Egorov, A.Y. ; Zhukov, A.E. ; Komin, V.V. ; Kosogov, A.O. ; Krestnikov, I.L. ; Maximov, M.V. ; Ruvimov, S.S. ; Sakharov, A.V. ; Sherniakov, Yu.M. ; Zaitsev, S.V. ; Alferov

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1996

fDate

7-7 June 1996

Firstpage

181

Lastpage

182

Abstract

Summary form only given. Deposition of thin InGaAs layer on the GaAs(100) surface using MOCVD results in a formation of nanoscale islands. Double heterojunction GaAs-AlGaAs injection lasers were grown with InGaAs islands introduced in the active region. The photoluminescence (PL) spectrum of the laser structure with etched off contact layer is shown.

Keywords

III-V semiconductors; current density; electroluminescence; gallium arsenide; indium compounds; island structure; photoluminescence; quantum well lasers; self-adjusting systems; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; Electroluminescence; Gallium arsenide; Optical coupling; Optical resonators; Photoluminescence; Quantum dot lasers; Temperature distribution; Temperature measurement; Threshold current; US Department of Transportation;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Conference_Location

Anaheim, CA, USA

Print_ISBN

1-55752-444-0

Type

conf

Filename

865741