DocumentCode

3555949

Title

CMOS-Devices isolated by ion-implanted buried silicon nitride

Author

Zimmer, G. ; Neubert, E. ; Zetzmann, W. ; Liu, Z.L.

Author_Institution

University of Dortmund, Dortmund, W.Germany

Volume

28

fYear

1982

fDate

1982

Firstpage

789

Lastpage

790

Keywords

Annealing; Circuit testing; Epitaxial growth; Epitaxial layers; Implants; Inverters; Leakage current; MOSFETs; Nitrogen; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1982 International

Type

conf

DOI

10.1109/IEDM.1982.190414

Filename

1482948