• DocumentCode
    3555989
  • Title

    1600V Power MOSFET with 20ns switching-speed

  • Author

    Yoshida, Isao ; Okabe, Takeaki ; Iijima, Tetsuo ; Ohtaka, Shigeo ; Nagata, Minoru

  • Author_Institution
    Hitachi Limited, Kokubunji, Tokyo
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    91
  • Lastpage
    94
  • Abstract
    A high-power MOSFET has been developed which has a breakdown voltage as high as 1600V, a 5A current capability and a switching time as fast as 20ns. This device has a field limiting ring structure for junction termination, and this structure was optimized by a sophisticated two-dimensional numerical analysis. To increase current capabilities, an optimized cell structure was designed based on experimental data. Furthermore, an ultra-high switching speed was obtained, through reducing the input capacitance of the new gate structure to half that for a conventional one.
  • Keywords
    Capacitance; Electrodes; Electron devices; Fabrication; Feedback; Ion implantation; MOSFET circuits; Power MOSFET; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190448
  • Filename
    1483573
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3555989