Title :
Contact technology in 3-5 device analysis and modification of metal-semiconductor contact interfaces in 3-5 devices
Author_Institution :
Xerox Webster Research Center, Webster, New York
Keywords :
Artificial intelligence; Atomic layer deposition; Chemical compounds; Degradation; Gallium arsenide; Gold; Lattices;
Conference_Titel :
Electron Devices Meeting, 1983 International
DOI :
10.1109/IEDM.1983.190453
