• DocumentCode
    3556012
  • Title

    Characterization of simultaneous bulk and interface high-field trapping effects in SiO2

  • Author

    Nissan-Cohen, Y. ; Shappir, J. ; Frohman-Bentchkowsky, D.

  • Author_Institution
    The Hebrew University of Jerusalem, Jerusalem, ISRAEL
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    182
  • Lastpage
    185
  • Abstract
    A combined C-V, I-V measurement method is used to detect and characterize the simultaneous effects of several types of high field trapping phenomena in polysilicon-oxide-silicon capacitors. The experimental results show that both positive and negative charges are produced in the oxide but with different spatial distributions and time constants and that interface states are generated.
  • Keywords
    Capacitance-voltage characteristics; Charge measurement; Current measurement; Electric breakdown; Electron traps; Interface states; MOS capacitors; Shape measurement; Threshold voltage; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190471
  • Filename
    1483596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556012