Practical size limits of high voltage IC´s

To develop high voltage IC´s of small chip sizes, relationships between geometrical parameters and electrical properties of dielectrically isolated high voltage devices were investigated, and practical size limits of the lateral devices were determined. Device techniques for electric field reduction and efficient carrier transfer were introduced. Using these techniques, each of the thyristor and an ac switch was fabricated in the area of 0.07 mm²and 2.03mm²per one crosspoint pairs. Their main specifications were 350 V blocking voltage, 250 mA dc current and 7 ω on-resistance.