DocumentCode
3556095
Title
A new imaging device using amorphous silicon
Author
Kusano, C. ; Ishioka, S. ; Imamura, Y. ; Takasaki, Y. ; Shimomoto, Y. ; Hirai, T. ; Maruyama, E.
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
29
fYear
1983
fDate
1983
Firstpage
509
Lastpage
512
Abstract
A new imaging tube has been fabricated and successfully operated. In this tube, hydrogenated amorphous silicon (a-Si:H) is used as the photoconductive target. This target has a blocking type structure and is covered with a layer which has a high secondary electron emission yield, and its surface is scanned by a high velocity electron beam. The internal electric field in the photoconductor is the opposite of those used in conventional tubes, in that the secondary electron current, which is proportional to the light intensity, is obtained as a video signal. This new imaging tube overcomes a lot of disadvantages with conventional imagers in that it has high photosensitivity in the visible wavelength range, very small decay lag at high and low illumination levels, a high resolution of more than 700 TV lines uniformly, no burning and no blooming.
Keywords
Amorphous silicon; Electron beams; Electron emission; Electron tubes; High-resolution imaging; Image resolution; Lighting; Optical imaging; Photoconductivity; Signal resolution;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Type
conf
DOI
10.1109/IEDM.1983.190555
Filename
1483680
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