X and Ku-band high power GaAs FETs

A couple of high power GaAs MESFET chips with an improved packing density(total gatewidth per unit chip width) in their electrode pattern has been developed in order to improve RF performance at X-through Ku-band. The chip width has been reduced to approximately 40% of the previously existing power GaAs FET with the same total gatewidth. Internally matched packaged devices have exhibited 10W power output with 3dB associated gain and 17% power added efficiency at 11.2GHz, and 7W saturated power output with 5.2dB linear gain at 14.5GHz in a single package.