• DocumentCode
    3556149
  • Title

    Diffusion limited dark current in n-type (Hg,Cd)Te MIS devices

  • Author

    Colombo, Luigi ; Syllaios, A.J.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Texas
  • Volume
    29
  • fYear
    1983
  • fDate
    1983
  • Firstpage
    718
  • Lastpage
    721
  • Abstract
    A dominant diffusion limited dark current behavior is observed in Metal Insulator Semiconductor (MIS) devices on uncompensated n-type (Hg,Cd)Te. The measured dark current in crystals with an 80K spectral cut-off wavelength ranging from 9,3µm to 9.9µm is found to approach the intrinsic Auger limit at temperatures above 65K. This behavior is observed only in crystals with dislocation densities lower than 2 \\times 10^{5} cm-2, whereas in crystals with higher dislocation densities diffusion currents predominate at higher temperatures.
  • Keywords
    Crystals; Current measurement; Dark current; Infrared detectors; MIS devices; Photonic band gap; Temperature dependence; Temperature distribution; Tunneling; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1983 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1983.190609
  • Filename
    1483734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556149