DocumentCode
3556151
Title
Monolithic 128 × 128 InSb FPA´s for staring infrared imaging systems
Author
Bahraman, A. ; Pocock, D.N.
Author_Institution
Northrop Research and Technology Center, Palos Verdes Peninsula, California
fYear
1983
fDate
5-7 Dec. 1983
Firstpage
726
Lastpage
729
Abstract
A 128 × 128 monolithic InSb array is developed for application in staring infrared imaging systems operating in the 3-5 µm spectral range. The array uses a 1.2 × 1.2 mil unit cell with a measured bucket capacity of about 500,000 carriers. Factors affecting bucket capacity are discussed. Thermal imagery was demonstrated with an experimental laboratory model operating at 30 frames/sec. A system MRT of 0.5°C, limited by preamplifier noise and offsets, was measured for a single frame of data. The theoretical NE Δ T for operation under ideal conditions is 0.04°C with no frame averaging.
Keywords
Capacitance-voltage characteristics; Detectors; Etching; Fabrication; Infrared imaging; Optical imaging; Optical signal processing; Process design; Sensor arrays; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1983 International
Conference_Location
Washington, DC, USA
Type
conf
DOI
10.1109/IEDM.1983.190611
Filename
1483736
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