Title :
A manufacturable 1.2 um double poly, double level metal CMOS process for a one-megabit DRAM
Author :
Harrington, Thomas ; Bayless, Malcolm ; Waller, Bill ; Chan, Tak-Ming Cyrus ; Chan, T.C.
Author_Institution :
Mostek Corporation, Carrollton, Texas
Abstract :
In recent years, many highly sophisticated technologies have been advanced for producing VLSI circuits. These include such schemes as deep trench isolation and trench capacitors
Keywords :
Boron; CMOS process; CMOS technology; Circuits; Conductors; Dielectrics; Isolation technology; Manufacturing processes; Random access memory; Resists;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190644
