DocumentCode
3556253
Title
Recent developments in CMOS latchup
Author
Troutman, Ronald R.
Author_Institution
IBM General Technology Division, Essex Jct., Vt.
Volume
30
fYear
1984
fDate
1984
Firstpage
296
Lastpage
299
Abstract
CMOS is rapidly becoming an important VLSI technology, and if its scaling is to continue, latchup must be understood and controlled. Coupled with dramatic CMOS technology improvements in recent years have come significant advances in latchup characterization and modeling. This talk highlights some of those advances.
Keywords
Anodes; CMOS technology; Critical current; Current measurement; Doping; FETs; Semiconductor device measurement; Testing; Threshold voltage; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1984 International
Type
conf
DOI
10.1109/IEDM.1984.190706
Filename
1484477
Link To Document