• DocumentCode
    3556277
  • Title

    Growth and characterization of as grown p-n junctions fabricated in multilayer liquid phase epitaxial (Hg, Cd)Te

  • Author

    Nayar, P.S. ; Ward, P.B. ; Colter, P.C. ; Hampton, S.R. ; Slawinski, J.W. ; Fishman, L. ; Callahan, C.M. ; Vydyanath, H.R.

  • Author_Institution
    Aerojet ElectroSystems Co., Azusa, Calif.
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    385
  • Lastpage
    388
  • Abstract
    (Hg,Cd) Te p-n junctions have been fabricated with growth of p-Hg1-yCdyTe on CdTe or (Cd,Zn)Te substrates followed by growth of n-Hg1-xCdxTe. Growths with x = y as well as x > y were attempted. p-n junctions formed in growths with x > y usually resulted in better detector performance. The as grown junctions have been characterized using Hall effect, EDAX, 300K transmission, diode spectral response, quantum efficiency, RoA, minority carrier lifetime and C-V measurements. Despite the absence of a heterojunction between the optically active p layer and the wider gap n layer, the superior detector performance in the as grown junctions where x > y, is attributable to the passivation the wider gap layer provides.
  • Keywords
    Charge carrier lifetime; Detectors; Diodes; Hall effect; Mercury (metals); Nonhomogeneous media; P-n junctions; Phase detection; Substrates; Tellurium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190730
  • Filename
    1484501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556277