• DocumentCode
    3556294
  • Title

    VHF High power VD2MOSFET

  • Author

    Yoshida, Hiroshi ; Shibata, Yasuo ; Usunaga, Yukiyasu

  • Author_Institution
    NEC Corporation, Kawasaki, Japan
  • Volume
    30
  • fYear
    1984
  • fDate
    1984
  • Firstpage
    451
  • Lastpage
    454
  • Abstract
    A new VHF power device with a Vertical Double diffused Dual gate MOSFET structure has been developed. This VD2MOSFET shows the maximum output power of 65W with a power gain of 12 dB at 100MHz. The gain controllability expressed by DeltaP_{out}/DeltaV_{cg} is a constant at 5W/V over a V_{cg} range of 4-14V. By using this controllability , the gain of a VHF power amplifier is expected to be stabilized with a simple feedback.
  • Keywords
    Aluminum; Controllability; FETs; Fabrication; Frequency; MOSFET circuits; Packaging; Power MOSFET; Power amplifiers; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1984 International
  • Type

    conf

  • DOI
    10.1109/IEDM.1984.190748
  • Filename
    1484519
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3556294