Title :
Fully optical and electrically interfaced, monolithic 1 × 12 array of In0.53Ga0.47As/InP p-i-n photodiodes
Author :
Brown, M.G. ; Forrest, S.R. ; Hu, P.H.-S. ; Kaplan, D.R. ; Koza, M. ; Ota, Y. ; Potopowicz, J.R. ; Seabury, C.W. ; Washington, M.A.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, New Jersey
Abstract :
We describe the fabrication of monolithically integrated, 1 × 12 arrays of In0.53Ga0.47As/InP photodiodes. These devices are fully electrically and optically interfaced, and are useful for fiber-optic system applications. The dark current of each diode at -5 V is 80% at 1.3 µm for the diodes. These are, to our knowledge, the first such devices made for use in long-wavelength, optical fiber systems.
Keywords :
Capacitance; Dark current; Indium phosphide; Optical arrays; Optical buffering; P-i-n diodes; PIN photodiodes; Packaging; Silicon; Testing;
Conference_Titel :
Electron Devices Meeting, 1984 International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1984.190827
