Title :
Thick selective tungsten for VLSI: Selectivity enhancement considerations
Author :
Blewer, R.S. ; Wells, V.A.
Author_Institution :
Sandia National Laboratories, Albuquerque, New Mexico
Keywords :
Electrons; Geometry; Hydrogen; Laboratories; Microelectronics; Rough surfaces; Silicides; Silicon; Tungsten; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1984 International
DOI :
10.1109/IEDM.1984.190861
