Optically induced, spatially resolved backgating transients in GaAs FETs

Optical pulses have been found to produce long-term current transients in GaAs field-effect transistors. The long durations--of the order of a second--and the fact that transient current decreases may be induced display a similarity to backgating transients induced by bursts of ionizing radiation. The semiconductor region adjacent to the connecting strip between the gate electrode and the gate bonding pad, where longitudinal source-to-drain electric fields are lowest, is particularly sensitive to optical backgating.