DocumentCode :
3556461
Title :
Heteroepitaxial PbTe-Si and (Pb, Sn)Se-Si structures for monolithic 3-5 µm and 8-12 µm infrared sensor arrays
Author :
Zogg, H. ; Norton, P.
Author_Institution :
Swiss Federal Institute of Technology, Zürich, Switzerland
fYear :
1985
fDate :
1-4 Dec. 1985
Firstpage :
121
Lastpage :
124
Abstract :
Epitaxial layers of narrow gap PbTe and (Pb,Sn) Se have been grown on Si substrates, and used for the first time to fabricate intrinsic photovoltaic IR-sensors on Si for the 3-5µm and 8-12µm range. The narrow gap semiconductors were grown on the BaF2side of a graded (Ca,Ba)F2buffer film which served to overcome the large lattice mismatch (up to 19%) to the Si. The backside illuminated IR-devices revealed resistance area products at 87K of up to 4Ωcm2for PbTe (cut -off wavelength 5.8µm), and up to 0.5Ωcm2for (Pb,Sn) Se with 9.7 µm cut-off. These values come close to or exceed the photon noise limit (for 295K background radiation, 180° FOV, 50% quantum efficiency). The results open up the possibility to construct large monolithic IR-FPA´s (focal plane arrays) with IR-sensors in the narrow gap semiconductor and signal processing in the Si.
Keywords :
Background noise; Epitaxial layers; Infrared sensors; Lattices; Photovoltaic systems; Semiconductor device noise; Semiconductor films; Sensor arrays; Solar power generation; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1985 International
Conference_Location :
Washington, DC, USA
Type :
conf
DOI :
10.1109/IEDM.1985.190908
Filename :
1485458
Link To Document :
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